1n4150 document number 85522 rev. 1.8, 20-aug-10 vishay semiconductors www.vishay.com 1 94 9367 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal fast switching diodes features ? silicon epitaxial planar diode ? low forward voltage drop ? aec-q101 qualified ? high forward current capability ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? high speed switch and general purpose use in computer and industrial applications mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10 k per 13" reel (52 mm tape), 50 k/box tap/10 k per ammopack (52 mm tape), 50 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part ordering code type marking remarks 1n4150 1n4150-tr or 1N4150-TAP 1n4150 tape and reel/ammopack parameter test condition symbol value unit repetitive peak reverse voltage v rrm 50 v reverse voltage v r 50 v peak forward surge current t p = 1 s i fsm 4a average peak forward current i frm 600 ma forward continuous current i f 300 ma average forward current v r = 0 i fav 150 ma power dissipation l = 4 mm, t l = 45 c p tot 440 mw l = 4 mm, t l 25 c p tot 500 mw parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
www.vishay.com 2 document number 85522 rev. 1.8, 20-aug-10 1n4150 vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified package dimensions in mm (inches): do-35 parameter test condition symbol min. ty p. max. unit forward voltage i f = 1 ma v f 540 620 mv i f = 10 ma v f 660 740 mv i f = 50 ma v f 760 860 mv i f = 100 ma v f 820 920 mv i f = 200 ma v f 870 1000 mv reverse current v r = 50 v i r 100 na v r = 50 v, t j = 150 c i r 100 a diode capacitance v r = 0, f = 1 mhz, v hf = 50 mv c d 2.5 pf reverse recovery time i f = i r = (10 to 100) ma, i r = 0.1 x i r , r l = 100 t rr 4ns figure 1. reverse current vs. junction temperature 040 8 0 120 160 200 0.01 0.1 1 10 100 i- re v erse c u rrent ( a) r t j - j u nction temperat u re (c) 94 9100 scattering limit v r = 50 v figure 2. forward current vs. forward voltage 00.40. 8 1.2 1.6 0.1 1 10 100 1000 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 9162 scattering limit t j = 25 c 94 9366 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. 0.55. (0.022) max cathode identification 1.7 (0.067) 1.5 (0.059) re v . 6 - date: 29. jan u ary 2007 doc u ment no.: 6.560-5004.02-4
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